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mw4ic915nbr1 mw4ic915gnbr1 1 rf device data freescale semiconductor rf ldmos wideband integrated power amplifiers the mw4ic915nb/gnb wideband integrated circuit is designed for gsm and gsm edge base station applications. it uses freescale?s newest high voltage (26 to 28 volts) ldmos ic technology and integrates a multi - stage structure. its wideband on - chip design makes it usable from 750 to 1000 mhz. the linearity performances cover all modulations for cellular applications: gsm, gsm edge, tdma, n - cdma and w - cdma. final application ? typical performance: v dd = 26 volts, i dq1 = 60 ma, i dq2 = 240 ma, p out = 15 watts cw, full frequency band (860 - 960 mhz) power gain ? 30 db power added efficiency ? 44% driver application ? typical gsm/gsm edge performances: v dd = 26 volts, i dq1 = 60 ma, i dq2 = 240 ma, p out = 3 watts avg., full frequency band (869 - 894 mhz and 921 - 960 mhz) power gain ? 31 db power added efficiency ? 19% spectral regrowth @ 400 khz offset = - 65 dbc spectral regrowth @ 600 khz offset = - 83 dbc evm ? 1.5% ? capable of handling 5:1 vswr, @ 26 vdc, 921 mhz, 15 watts cw output power features ? characterized with series equivalent large - signal impedance parameters ? on - chip matching (50 ohm input, dc blocked, >3 ohm output) ? integrated quiescent current temperature compensation with enable/disable function ? on - chip current mirror g m reference fet for self biasing application (1) ? integrated esd protection ? 200 c capable plastic package ? n suffix indicates lead - free terminations. rohs compliant. ? in tape and reel. r1 suffix = 500 units per 44 mm, 13 inch reel. 1. refer to an1987/d, quiescent current control for the rf integrated circuit device family. go to http://www.freescale.com/rf . select documentation/application notes - an1987. mw4ic915n rev. 7, 5/2006 freescale semiconductor technical data 860 - 960 mhz, 15 w, 26 v gsm/gsm edge, n - cdma rf ldmos wideband integrated power amplifiers case 1329 - 09 to - 272 wb - 16 plastic mw4ic915nbr1 mw4ic915nbr1 mw4ic915gnbr1 case 1329a - 03 to - 272 wb - 16 gull plastic mw4ic915gnbr1 figure 1. functional block diagram figure 2. pin connections (top view) gnd v rd1 rf in v gs1 gnd v rd2 rf out/ v ds2 gnd v gs2 gnd v rg2 v ds1 v rg1 nc nc nc v gs1 rf in v ds1 v gs2 v ds2 /rf out quiescent current temperature compensation v rd2 v rg2 2 3 4 5 6 7 8 16 15 14 13 12 9 10 11 1 note: exposed backside flag is source terminal for transistors. v rd1 v rg1 ? freescale semiconductor, inc., 2006. all rights reserved.
2 rf device data freescale semiconductor mw4ic915nbr1 mw4ic915gnbr1 table 1. maximum ratings rating symbol value unit drain- source voltage v dss - 0.5. +65 vdc gate - source voltage v gs - 0.5. +15 vdc storage temperature range t stg - 65 to +175 c operating junction temperature t j 200 c table 2. thermal characteristics characteristic symbol value (1) unit thermal resistance, junction to case gsm application stage 1, 26 vdc, i dq = 60 ma (p out = 15 w cw) stage 2, 26 vdc, i dq = 240 ma gsm edge application stage 1, 26 vdc, i dq = 60 ma (p out = 7.5 w cw) stage 2, 26 vdc, i dq = 240 ma cdma application stage 1, 26 vdc, i dq = 60 ma (p out = 3.75 w cw) stage 2, 26 vdc, i dq = 240 ma r jc 7.3 1.7 7.3 1.8 7.4 1.9 c/w table 3. esd protection characteristics test conditions class human body model 1 (minimum) machine model m3 (minimum) charge device model c2 (minimum) table 4. moisture sensitivity level test methodology rating package peak temperature unit per jesd 22 - a113, ipc/jedec j - std - 020 3 260 c table 5. electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit functional tests (in freescale test fixture, 50 ohm system) v ds = 26 vdc, i dq1 = 90 ma, i dq2 = 240 ma, p out = 15 w pep, f1 = 869 mhz, f2 = 869.1 mhz and f1 = 960 mhz and f2 = 960.1 mhz, two - tone power gain g ps 29 31 ? db power added efficiency pae 29 31 ? % intermodulation distortion imd ? -40 -29 dbc input return loss irl ? -15 -10 db 1. refer to an1955/d, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes - an1955. (continued)
mw4ic915nbr1 mw4ic915gnbr1 3 rf device data freescale semiconductor table 5. electrical characteristics (t c = 25 c unless otherwise noted) (continued ) characteristic symbol min typ max unit typical performances (in freescale reference board) v ds = 26 v, i dq1 = 60 ma, i dq2 = 240 ma, 869 mhz960 mhz quiescent current accuracy over temperature with 1.8 k gate feed resistors ( - 10 to 85 c) (1) i qt ? 5 ? % gain flatness in 40 mhz bandwidth @ p out = 3 w cw g f ? 0.2 ? db deviation from linear phase in 40 mhz bandwidth @ p out = 3 w cw ? 0.6 ? delay @ p out = 3 w cw including output matching delay ? 2.5 ? ns part - to - part phase variation @ p out = 3 w cw ? ? 15 ? typical gsm/gsm edge performances (in freescale reference board) v ds = 26 v, i dq1 = 60 ma, i dq2 = 240 ma, 869 mhz 4 rf device data freescale semiconductor mw4ic915nbr1 mw4ic915gnbr1 z6 0.157 x 0.283 microstrip z7 0.429 x 0.283 microstrip z8 0.394 x 0.088 microstrip z9 0.181 x 0.088 microstrip pcb taconic tlx8, 0.030 , r = 2.55 figure 3. mw4ic915nbr1(gnbr1) test fixture schematic z1 0.086 , 50 microstrip z2 0.133 x 0.236 microstrip z3 0.435 x 0.283 microstrip z4 0.171 x 0.283 microstrip z5 0.429 x 0.283 microstrip c3 c2 c1 c4 c5 c6 c7 c8 c9 r1 r2 z1 rf input v ds1 v gs1 v gs2 z2 z3 z4 z5 z7 z6 z8 z9 rf output l1 c16 m1 m4 m2 m3 + + + c11 c10 c15 + c14 + v ds2 c12 c13 1 2 3 4 5 6 7 8 14 13 12 11 10 9 15 16 nc nc nc quiescent current temperature compensation table 6. mw4ic915nbr1(gnbr1) test fixture component designations and values part description part number manufacturer c1, c6, c9, c14 22 f, 35 v tantalum chip capacitors taje226m035r avx c2, c5, c8, c11 1000 pf chip capacitors 100b102jca500x atc c3, c4, c7, c10, c16 22 pf chip capacitors 100b220jca500x atc c12, c13 10 pf chip capacitors 100b100jca500x atc c15 10 f tantalum chip capacitor t491x226k035as4394 kemet l1 12.5 nh inductor m1, m2, m3, m4 0.283 , 90 mitered microstrip bends r1, r2 10 k , 1/4 w chip resistor (1206)
mw4ic915nbr1 mw4ic915gnbr1 5 rf device data freescale semiconductor figure 4. mw4ic915nbr1(gnbr1) test fixture component layout mw4ic915mb rev 0 v ds2 r1 c1 v ds1 v gs1 v gs2 r2 c2 c3 c4 c5 c6 c7 c8 c9 c10 l1 c11 c12 c13 c14 c15 c16 freescale has begun the transition of marking printed ci rcuit boards (pcbs) with the freescale semiconductor signature/logo. pcbs may have either motorola or freescale markings during the transition period. these changes will have no impact on form, fit or function of the current product.
6 rf device data freescale semiconductor mw4ic915nbr1 mw4ic915gnbr1 c16 c12 c11 z5 0.566 x 0.043 microstrip z6 0.165 x 0.043 microstrip z7 0.078 x 0.043 microstrip pcb taconic rf35, 0.02 , r = 3.5 figure 5. mw4ic915nbr1(gnbr1) reference board schematic z1 0.681 x 0.039 , 50 microstrip z2 0.157 x 0.228 microstrip z3 0.468 x 0.157 microstrip z4 0.220 x 0.157 microstrip c9 c10 c7 c8 r1 r2 z1 rf input v gs z2 z3 z4 z6 z7 rf output c3 + v ds c1 z5 c15 c2 c4 c5 c6 r7 r4 p2 c17 c14 c13 r3 r6 r5 p1 + + nc nc nc quiescent current temperature compensation 1 2 3 4 5 6 7 14 13 12 11 10 15 16 8 9 table 7. mw4ic915nbr1(gnbr1) reference board component designations and values part description part number manufacturer c1, c15 10 pf chip capacitors (0805), accu - p 08051j100gbt avx c2 5.6 pf chip capacitor (0805), accu - p 08051j5r6bbt avx c3, c4, c9, c11, c13 33 pf chip capacitors (0805), accu - p 08051j330gb avx c5, c10, c12, c14 10 nf chip capacitors (0805) 08055c103kat avx c6, c7, c8 22 f, 35 v tantalum capacitors taje226mo35r avx c16, c17 100 nf chip capacitors (0805) 08055c104kat avx p1, p2 5 k potentiometer cms cermet multi - turn 3224w bourns r1, r2, r3, r4, r5 0 , 1/8 w chip resistors (0805) r6, r7 10 k , 1/4 w chip resistors (1206)
mw4ic915nbr1 mw4ic915gnbr1 7 rf device data freescale semiconductor figure 6. mw4ic915nbr1(gnbr1) reference board component layout c17 c12 c11 c14 c5 r1 c6 v dd v gg ground ground c8 r3 r2 r5 c16 r4 c2 c15 c3 p2 c1 p1 r6 r7 c13 c9 c10 c7 c4 mw4ic915mb rev 0 freescale has begun the transition of marking printed ci rcuit boards (pcbs) with the freescale semiconductor signature/logo. pcbs may have either motorola or freescale markings during the transition period. these changes will have no impact on form, fit or function of the current product.
8 rf device data freescale semiconductor mw4ic915nbr1 mw4ic915gnbr1 typical characteristics (freescale test fixture, 50 ohm system) pae 960 14 34 860 ?80 0 irl g ps imd3 f, frequency (mhz) figure 7. two - tone wideband circuit performance @ p out = 15 watts pep intermodulation distortion (dbc) imd3, v dd = 26 vdc p out = 15 w (pep) i dq1 = 90 ma, i dq2 = 240 ma two?tone measurement 100 khz tone spacing input return loss (db) irl, 880 900 920 940 32 ?8 30 ?16 28 ?24 26 ?32 24 ?40 22 ?48 20 ?56 18 ?64 16 ?72 pae 960 14 34 860 ?70 0 irl g ps imd3 f, frequency (mhz) figure 8. two - tone wideband circuit performance @ p out = 6 watts intermodulation distortion (db) imd3, irl, input return loss (db) v dd = 26 vdc p out = 6 w (pep) i dq1 = 90 ma, i dq2 = 240 ma two?tone measurement 100 khz tone spacing 32 ?7 30 ?14 28 ?21 26 ?28 24 ?35 22 ?42 20 ?49 18 ?56 16 ?63 880 900 920 940 100 ?90 ?20 0.1 7th order p out , output power (watts) avg. figure 9. intermodulation distortion products versus output power intermodulation distortion (dbc) imd, v dd = 26 vdc i dq1 = 90 ma, i dq2 = 240 ma f = 960 mhz 100 khz tone spacing 5th order 3rd order ?30 ?40 ?50 ?60 ?70 ?80 110 100 27 34 0.1 0 56 p out , output power (watts) figure 10. power gain and power added efficiency versus output power v dd = 26 vdc i dq1 = 60 ma, i dq2 = 240 ma f = 910 mhz t c = ?30 c 25 c 85 c ?30 c 25 c 85 c 10 1 33 32 31 30 29 28 48 40 32 24 16 8 960 28 35 860 f, frequency (mhz) figure 11. power gain versus frequency g ps , power gain (db) v dd = 26 vdc p out = 3 w cw i dq1 = 60 ma, i dq2 = 240 ma t c = ?30 c 25 c 85 c 34 33 32 31 30 29 870 880 890 900 910 920 930 940 950 typical characteristics (freescale reference board) pae , power added efficiency (%), g ps , power gain (db) pae , power added efficiency (%), g ps , power gain (db) g ps pae pae , power added efficiency (%) g ps , power gain (db)
mw4ic915nbr1 mw4ic915gnbr1 9 rf device data freescale semiconductor typical characteristics (freescale reference board) - continued f, frequency (mhz) figure 12. power gain versus frequency 960 28 34 860 v dd = 26 vdc p out = p1db i dq1 = 60 ma, i dq2 = 240 ma t c = ?30 c 25 c 85 c 33 32 31 30 29 870 880 890 900 910 920 930 940 950 g ps , power gain (db) 960 17 21 860 t c = ?30 c f, frequency (mhz) figure 13. power added efficiency versus frequency pae, power added efficiency (%) v dd = 26 vdc p out = 3 w cw i dq1 = 60 ma, i dq2 = 240 ma 25 c 85 c 20 19 18 950 940 930 920 910 900 890 880 870 100 0 4 0.1 p out , output power (watts) avg. figure 14. error vector magnitude versus output power evm, error vector magnitude (% rms) t c = 85 c v dd = 26 vdc i dq1 = 60 ma, i dq2 = 240 ma edge modulation f = 910 mhz 25 c ?30 c 110 3.5 3 2.5 2 1.5 1 0.5 100 ?80 ?50 0.1 p out , output power (watts) figure 15. spectral regrowth at 400 khz versus output power spectral regrowth @ 400 khz (dbc) t c = 85 c v dd = 26 vdc i dq1 = 60 ma, i dq2 = 240 ma edge modulation f = 910 mhz 25 c ?30 c ?55 ?60 ?65 ?70 ?75 110 p out , output power (watts) figure 16. spectral regrowth at 600 khz versus output power 100 ?86 ?70 0.1 spectral regrowth @ 600 khz (dbc) t c = ?30 c v dd = 26 vdc i dq1 = 60 ma, i dq2 = 240 ma edge modulation f = 910 mhz 25 c 85 c ?72 ?74 ?76 ?80 ?82 110 ?78 ?84
10 rf device data freescale semiconductor mw4ic915nbr1 mw4ic915gnbr1 v dd = 26 v, i dq1 = 60 ma, i dq2 = 240 ma, p out = p1db figure 17. series equivalent input and load impedance z o = 5 f = 900 mhz f = 980 mhz f mhz z load 900 910 920 3.23 - j4.30 3.24 - j4.36 3.25 - j4.42 z load z load = test circuit impedance as measured from drain to ground. 930 940 950 3.25 - j4.47 3.23 - j4.52 3.21 - j4.56 960 970 980 3.16 - j4.60 3.11 - j4.65 3.04 - j4.70 z in z load device under test output matching network
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20 rf device data freescale semiconductor mw4ic915nbr1 mw4ic915gnbr1 information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does freescale semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2006. all rights reserved. how to reach us: home page: www.freescale.com e - mail: support@freescale.com usa/europe or locations not listed: freescale semiconductor technical information center, ch370 1300 n. alma school road chandler, arizona 85224 +1 - 800- 521- 6274 or +1 - 480- 768- 2130 support@freescale.com europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33 1 69 35 48 48 (french) support@freescale.com japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1 - 8 - 1, shimo - meguro, meguro - ku, tokyo 153 - 0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor hong kong ltd. technical information center 2 dai king street tai po industrial estate tai po, n.t., hong kong +800 2666 8080 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center p.o. box 5405 denver, colorado 80217 1 - 800- 441- 2447 or 303 - 675- 2140 fax: 303 - 675- 2150 ldcforfreescalesemiconductor@hibbertgroup.com mw4ic915n rev. 7, 5/2006 rohs- compliant and/or pb - free versions of freescale products have the functionality and electrical characteristics of their non - rohs- compliant and/or non - pb - free counterparts. for further information, see http://www.freescale.com or contact your freescale sales representative. for information on freescale?s environmental products program, go to http://www .freescale.com/epp.

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